Dr. Nabil Shovon Ashraf

Associate Professor

Post Doctoral Scholar, EE department, Arizona State University (ASU) USA, 12/2011-05/ 2014, Ph.D. in EE from ASU, USA in 2011.

M.S. in Electrical Engineering from University of Central Florida, USA in 1999.

B. Tech. (Bachelor of Technology) in Electrical Engineering from Indian Institute of Technology Kanpur, India in 1997.

 

Office: SAC 932
Office hours:

Fall 2019 office hours:

Sunday & Tuesday: 10:00 am-12:30 pm

Monday & Wednesday: 10:00 am-12:30 pm

Thursday: 11:00 am-3:00 pm,  6:00 pm-8:00 pm

Phone: +88 02 55668200 Ext – 1502

Biography

Dr. Nabil Shovon Ashraf was born in Dhaka, Bangladesh in 1974 on 10th of August. He completed S.S.C. examination from University Laboratory School in 1989 and H.S.C examination from Dhaka College in 1991 and was placed 9th in the combined merit list in Dhaka Board. In 1992 he decided to go to IIT Kanpur, India to study B.Tech. degree in Electrical Engineering and completed it in 1997. In the same year he went to University of Central Florida Orlando, USA for graduate study in electrical engineering and completed in 1999. He was employed as a design engineer in RF monolithics located in Dallas, Texas, USA and returned to Bangladesh in 2002. He was then first served in a faculty role as Lecturer in Ahsanullah University of Science and Technology in the department of EEE from September 2002-September 2003 and then served in a faculty position as Assistant Professor in Islamic University of Technology Gazipur, Bangladesh in the department of EEE from October 2003-June 2006. In Fall 2006, He was admitted in the Ph.D. program in electrical engineering in Arizona State University, Tempe and completed the degree in 2011. From December 2011- May 2014 he was a post doctoral researcher where his principal duty was to extend his Ph.D. work and assist his Ph.D. supervisor Professor Dr. Dragica Vasileska in research related publications. While the term was ongoing and the task was completed, he returned to Bangladesh in February 2014 and in September 2014, he was recruited as  a faculty in the department of ECE of North South University where he is currently an Associate Professor (April 2018-to date).  Prior to this role, he served as Assistant Professor in the Department of ECE of North South University from September 2014 till April 2018. He is listed in Marquis Who’s Who in America 2015 (released in 2014) and 2016 (released in 2015). He is a life member of Phi Kappa Phi national engineering honor society (USA) and member of IEEE-HKN ( Eta Kappa Nu, USA). While a  Ph.D. student in Arizona State University EE department, he received university graduate fellowship in Spring 2011. In 2017, Dr. Nabil Shovon Ashraf was awarded the Albert Nelson Marquis Lifetime Achievement Award from Marquis Who’s Who in America. The award was bestowed for the highest degree of devotion, integrity and commitment towards research contributions in USA and research and instructional contributions in Bangladesh including his service as a faculty in the ECE department of North South University. In addition, he is listed in Who’s Who in America for 2014 (69th edition) and 2015 (70th platinum edition). In 2020, Dr. Nabil Shovon Ashraf became the recipient of Marquis Who’s Who in The World 2020 award awarded to world’s top 3% highly successful achievers.

Research Areas

Research Interests

Semiconductor Device Materials & Testing:

  1. Device physics based analytical and numerical modeling
  2. Device performance improvement with Moore’s Law based scaling using device architectural innovation, material aspects and intrinsic parameters, i.e., lattice or substrate temperature reduction than normal room temperature operation.

Solid State Devices and Physics (key research area): MOSFET device physics based comprehensive modeling, device performance improvement by reliability assessment, device parameters such as mobility improvement and leakage current reduction by reduced substrate temperature operation.

Other research interests: Semiconductor device Characterization, Microelectronic Circuits, Micro-Electro Mechanical Systems.

Teaching

Selected Publications

Journals
  • N. Ashraf, D. Vasileska, “1/f Noise: Threshold Voltage and On-Current Fluctuations in 45 nm Device Technology Due To Charged Random Traps,” Journal of Computational Electronics, 2010
  • V. V. A. Camargo, N. Ashraf, L. Brusamarello, D. Vasileska, G. Wirth, “Impact of RDF and RTS On the Peformance of SRAM Cells,” Journal of Computational Electronics, 2010
  • N. Ashraf, D. Vasileska, “Static Analysis of Random Telegraph Noise in a 45 nm Channel Length Conventional MOSFET Device,” IEEE Transactions on Nanotechnology, 2011
  • N. Ashraf, D. Vasileska, G. Wirth, P. Srinivasan, “Accurate Model for the Threshold Voltage Fluctuations Estimation in 45 nm Channel Length MOSFET Devices in the Presence of Random Traps and Random Dopants,” IEEE Electron Device Letters, 2011
  • G. Wirth, D. Vasileska, N. Ashraf, L. Brusamarello, R. D. Guistina, P. Srinivasan, “Compact Modeling and Simulation of Random Telegraph Noise Under Non-Stationary Conditions In the Presence of Random Dopants,” Microelectronics Reliability, 2012
  • R. Agrawal, Q. Hasan, N. Ashraf, J. Kapat, K. B. Sundaram, J. Vaidya, “Design and Fabrication of a Meso-Scale Variable Capacitance Motor For Miniature Heat Pumps,” Journal of Micromechanics and Microengineering, 2003
Conference Papers
  • N. Ashraf, D. Vasileska, G.Klimeck, “Modeling Fluctuations in the Threshold Voltage and ON-current due to Random Telegraph Noise,” IEEE International Conference on Nanotechnology, 2010
  • N. Ashraf, D. Vasileska, G. Wirth, P. Srinivasan, “Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants,” IEEE International Conference on Nanotechnology, 2011
  • N. Ashraf, D. Vasileska, “3D Ensemble Monte Carlo device simulations of random trap induced degradation in drain current and in threshold voltage in the presence of random dopant distributions for 45 nm gate length MOSFETs,” IEEE Workshop On Variability Modeling and Characterization, 2010
  • N. Ashraf, D. Vasileska, Z. Ma, “Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to coupled effects of random interface and oxide traps with random channel dopant distributions,” Nanotech, 2010
  • N. S. Ashraf, H. C. Carter, K. Casey, L. C. Chow, S. Corban, M. K. Drost, A. J. Gumm, Z. Hao, A. Q. Hasan, J. S. Kapat, L. Kramer, M. Newton, K. B. Sundaram, J. Vaidya, C. C. Yong, K. Yerkes, “Design and Analysis of a Mesoscale Refrigerator,” Proceedings of the ASME , 1999
  • N. S. Ashraf, S. M. Saifuduzza, I. Doha, MMM Ul-Hasan, “Comparative Study of Microactuators as Elements of Current MEMS based Devices for Diversified Technological Applications,” IMEC, 2005
  • N. S. Ashraf, “Concept and Design of a Micromachined Miniature Variable Capacitance Motor (VCM) in Lead Zirconate Titanate (PZT) Substrate,” ICMN, 2006
  • R. A. Shafik, Md. S. Rahman, AHM Razibul Islam, N. S. Ashraf, “On the Error Vector Magntiude As a Performance Metric and Comparative Analysis,” ICET, 2006
  • N. Ashraf, D. Vasileska, “Comparative analysis of threshold voltage variations in presence of random channel dopants and a single random interface trap for 45 nm n-MOSFET as predicted by Ensemble Monte Carlo simulation and existing analytical model expressions,” Nanotech, 2011
  • N. Ashraf, S. Joshi, D. Vasileska, “Impact of Channel Length and Gate Width of a n-MOSFET Device on the Threshold Voltage and its Fluctuations in Presence of Random Channel Dopants and Random Interface Trap: A 3D Ensemble Monte Carlo Simulation Study,” Nanotech, 2012
  • N. Ashraf, D. Vasileska, “Modeling fluctuations in threshold voltage and on-current due to random telegraph noise,” IEEE Phoenix Workshop On Emerging Device and Packaging Technologies, 2010
  • N. Ashraf, S. Joshi, D. Vasileska, “Reliability Studies in 45 nm Technology Node Threshold Voltage Fluctuations due to Random Dopants and Random Telegraph Noise,” IEEE/ACM Workshop on Variability Modeling and Characterization, 2011
  • N. Ashraf, S. Joshi, D. Vasileska, “Reliability Studies in 45 nm Technology Node Threshold Voltage Fluctuations due to Random Dopants and Random Telegraph Noise,” ISANN ( International Symposium on Advanced Nanodevices and Nanotechnology), 2011
Book Chapters
  • N. Ashraf, D. Vasileska, G. Wirth, P. Srinivasan, “Comparative Analysis of Mobility and Dopant Number Fluctuations Models For The Threshold Voltage Fluctuations Estimation in 45 nm Channel Length MOSFET Device,” Nanoelectronic Device Applications Handbook, Taylor and Francis, CRC, 2013
  • D. Vasileska, N. Ashraf, “Atomistic Simulations on Reliability,” Circuit Design For Reliability (Hardcover Book), Springer New York, USA, pp 47-67., 2015
Others
  • Nabil Shovon Ashraf, Shawon Alam, Mohaiminul Alam, “New Prospects of Integrating Low Substrate Temperatures With Scaling-Sustained Device Architectural Innovation,” Morgan & Claypool Inc., USA, Synthesis Lecture Series on Emerging Engineering Technologies, Print ISSN: 2381-1412 / E-ISSN: 2381-1439, 2016
  • Dr. Nabil Shovon Ashraf, “Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET,” Morgan & Claypool Inc., California, USA (book publisher), 2018

Research Projects & Grants

Dr. Nabil Shovon Ashraf during his service since September 2014, had been involved with guiding 4 senior year undergraduate projects based on EEE 499 course from Fall 2014-Fall 2015 and as faculty supervisor of one internship (EEE 498) work on power transformer substation components inspection and reliability assessment . Two of the students working in senior year project on threshold voltage modeling of n-MOSFETs from 100K-500K substrate temperature have been listed as co-authors with Dr. Nabil Shovon Ashraf being lead author in one of the E-book and paperback book on Emerging Engineering Technologies which is published by Morgan & Claypool USA based publisher in 2016. In 2018 Dr. Nabil Shovon Ashraf has been the author of another book published by Morgan & Claypool USA on low substrate temperature modeling of scaled n-MOSFETs.

Professional Activity

Dr. Nabil Shovon Ashraf is currently engaged as a faculty in the rank of Associate Professor, Department of ECE, North South University, Dhaka, Bangladesh (April 2018-present). He was engaged as  a faculty in the rank of Assistant Professor,  Department of ECE, North South University, Dhaka, Bangladesh  (September 2014-April 2018). His prior professional service included an Assistant Professor appointment in the EEE department of Islamic University of Technology, Gazipur, Bangladesh (October 2003-June 2006) and a Lecturer appointment in the EEE department of Ahsanullah University of Science and Technology, Dhaka, Bangladesh (September 2002-October 2003). Dr. Nabil Shovon Ashraf was also previously employed as design engineer in the SAW filter design group in RF Monolithics Inc. located in Dallas, Texas, USA (Now under Murata Manufacturing Co. Ltd.  with branch office in USA location) from August 1999-March 2001.

In 2020, Dr. Nabil Shovon Ashraf has joined the Journal of Low Power Electronics and Applications (An MDPI journal) as a reviewer.

Dr. Nabil Shovon Ashraf has been a reviewer of ICAEE 2015 (3rd International Conference on Advances in Electrical Engineering) also co-sponsored by IEEE Bangladesh section. In 2016, he has been selected as a reviewer for ICECE conference 2016 organized by Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh. He was in the registration sub-committee for ICCIT conference 2016 organized by ECE department of North South University. In 2017, he has been a pro-active reviewer for ICAEE 2017 conference and acted as a track chair for IEEE-R10HTC 2017 conference held in BUET on December 2017. In 2019, as an appointed reviewer, he has conducted review over a host of articles submitted under broad areas of solid state devices and nanotechnology track for the ICAEE 2019 conference.