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Evidence of Charge Trapping Giving Rise to Resistance Drift of Metastable Amorphous Ge2Sb2Te5
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Resistance drift of metastable amorphous and crystalline fcc GeSbTe memory devices
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Enhanced Reset Variability in Phase Change Memory for Hardware Security Applications
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Investigation of Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures—Contributions of Charge Trapping
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Computational Analysis of Complex Amorphization/Crystallization Dynamics in Large Phase Change Memory Devices
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Robust Deep Speaker Recognition: Learning Latent Representation with Joint Angular Margin Loss
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