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Accurate Model for the Threshold Voltage Fluctuations Estimation in 45 nm Channel Length MOSFET Devices in the Presence of Random Traps and Random Dopants
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1/f Noise: Threshold Voltage and On-Current Fluctuations in 45 nm Device Technology Due To Charged Random Traps
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Design and Fabrication of a Meso-Scale Variable Capacitance Motor For Miniature Heat Pumps
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Comparative Analysis of Mobility and Dopant Number Fluctuations Models For The Threshold Voltage Fluctuations Estimation in 45 nm Channel Length MOSFET Device
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Modeling fluctuations in threshold voltage and on-current due to random telegraph noise
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Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants
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3D Ensemble Monte Carlo device simulations of random trap induced degradation in drain current and in threshold voltage in the presence of random dopant distributions for 45 nm gate length MOSFETs
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Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to coupled effects of random interface and oxide traps with random channel dopant distributions
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