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Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to coupled effects of random interface and oxide traps with random channel dopant distributions
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Comparative analysis of threshold voltage variations in presence of random channel dopants and a single random interface trap for 45 nm n-MOSFET as predicted by Ensemble Monte Carlo simulation and existing analytical model expressions
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Impact of Channel Length and Gate Width of a n-MOSFET Device on the Threshold Voltage and its Fluctuations in Presence of Random Channel Dopants and Random Interface Trap: A 3D Ensemble Monte Carlo Simulation Study
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Reliability Studies in 45 nm Technology Node Threshold Voltage Fluctuations due to Random Dopants and Random Telegraph Noise
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3D Ensemble Monte Carlo Device Simulations of Random Trap Induced Degradation in Drain Current and in Threshold Voltage in the Presence of Random Dopant Distributions for 45 nm Gate Length n-MOSFET
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Reliability Studies in 45 nm Technology Node Threshold Voltage Fluctuations due to Random Dopants and Random Telegraph Noise
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Modeling Fluctuations in the Threshold Voltage and ON-current due to Random Telegraph Noise
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Comparative Study of Microactuators as Elements of Current MEMS based Devices for Diversified Technological Applications
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Concept and Design of a Micromachined Miniature Variable Capacitance Motor (VCM) in Lead Zirconate Titanate (PZT) Substrate
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